Dr Patrick R. Palmer

RESEARCH PAPERS

Circuit Techniques:

  1. "The High Power IGBT Current Source Inverter", M. S. Abu Khaizaran, H. S. Rajamani and P.R. Palmer, 2001 IEEE IAS Annual Meeting Record, pp.879-885, Chicago, October 2001.
  2. "The series connection of IGBTs in a current source inverter", P.R. Palmer and M. Abu- Khazarim, IEEE PESC 2001, Vol. 1, pp. 170-175, Vancouver, June 2001.
  3. "The use of capsule IGBTs in the series connection", P.R.Palmer, H.S.Rajamani, N.Dutton, PEVD'00, IEE Conference Publication No. 475, pp. 250-255, London, Sept. 2000.
  4. * "An analysis of the series connection of IGBTs". A.N. Githiari and P.R. Palmer, IEE Proceedings on Circuits, Devices and Systems, Vol. 145, No. 5, pp. 354-360, Oct. 1998
  5. "Measurement of chip currents in IGBT modules". P.R. Palmer, J.C. Joyce and B.H. Stark, 7th European Conference on Power Electronics and Applications, Vol. 1, pp. 406-411, Trondheim, Sept. 1997
  6. * "The series connection of IGBTs with active voltage sharing". P.R. Palmer and A.N. Githiari, IEEE Transactions on Power Electronics, Vol. 12, No.4, pp.637-644, July 1997
  7. "Some scaling issues in the active control of IGBT modules for high power applications". P.R. Palmer, A.N. Githiari and R.J.Leedham, IEEE Power Electronics Specialists Conference, Vol.2, pp.854-860, St Louis, June 1997
  8. "High performance gate drives for utilising the IGBT in the active region". A.N. Githiari, R.J. Leedham and P.R. Palmer, IEEE Power Electronics Specialists Conference, Vol. 2, pp. 1754-1759, Baveno, June 1996
  9. "Insulated Gate Bipolar Transistor Control". P.R. Palmer, A.N. Githiari and R.L. Leedham, New British Patent Application No. 9610098.7, 15 May 1996
  10. "An MCT based industrial induction cooker circuit using zero current switching". P.R. Palmer and A.N. Githiari, 6th European Conference on Power Electronics and Applications, Vol. 2, pp. 677-682, Seville, Sept. 1995
  11. "The series connection of IGBTs with optimised voltage sharing in the switching transient". P.R. Palmer and A.N. Githiari, IEEE Power Electronics Specialists Conference, Vol.1, pp. 44-49, Atlanta, June 1995
  12. "The concurrent design of semiconductor devices and circuits for high voltage series operation", P.R. Palmer and A.N. Githiari, National Grid Company/University Forum on Power Electronics and FACTS, Warwick, Dec. 1994.
  13. * "Current measurement using compensated coaxial current shunts". C.M. Johnson and P.R. Palmer, IEE Proceedings on Science, Measurement and Technology, Vol. 141, No.6, pp.471-480, Nov. 1994
  14. "Design of anode and gate circuits for GTOs". P.R. Palmer, IEE Colloquium: Devices, drive circuits and protection, Digest 1994/104, London, April 1994
  15. "Current measurements using compensated co-axial shunts". C.M. Johnson and P.R. Palmer, IEE Colloquium: Measurement techniques for power electronics, Digest 1992/, Birmingham, October 1992
  16. "MOSFET circuit design for cost and reliability - a case study". P.R. Palmer, IEE Colloquium: New developments in power semiconductor devices, Digest 1991/094, London, May 1991
  17. "Improving GTO Thyristor reliability by use of linear MOSFET Amplifiers and controlled avalanching in gate drive circuits". C.M. Johnson and P.R. Palmer, IEE Power Electronics and Variable Speed Drives Conference, Publication 324, pp. 417-423, London, July 1990
  18. "Switch-off circuits for transistors and gate turn-off thyristors". B.W. Williams and P.R. Palmer, British Patent No. 2142495, Jan. 1985, US Patent # 4602209, July 1986
  19. "Drive and snubber techniques for GTO's and power transistors-particularly for inverter bridges". B.W. Williams and P.R. Palmer, IEE Power Electronics and Variable Speed Drives Conference, Publication 234, pp. 42-45, London, May 1984
Semiconductor Devices:
  1. "Temperature effects on Trench gate IGBTs", E. Santi, A. Caiafa, X. Kang, J.L. Hudgins, P.R. Palmer, D. Goodwine and A. Monti, 2001 IEEE IAS Annual Meeting Record, pp.1931-1937, Chicago, October 2001.
  2. "Behaviour of the Coolmos device and its body diode", K. Sheng, F. Udrea, G. A. J. Amaratunga and P.R. Palmer, 31st European Solid State Device Research Conference, ESSDERC 20001, pp. 251-254, Nurenberg, Sept. 2001
  3. "Short on-pulse reverse recovery behaviour of freewheeling diode" F. Nagaune, T. Miyasaka, S. Tagami, H. Shigekane, H. Kirihata and P.R.Palmer, IEEE/IEJ ISPSD'01, paper 9.8, Osaka, June 2001.
  4. "Thyristors", J. Hudgins, E. Santi, A. Caiafa, K. Lengel and P.R. Palmer, Power Electronics Handbook, Ed. Rashid, Academic Press, 2001.
  5. "Concurrent design of power semiconductor devices" University of Cambridge Thermal Materials Workshop 2001, Cambridge, May 2001.
  6. * "Design of single-gated multiple-mode power semiconductor devices", B.H. Stark and P.R. Palmer, IEE Proceedings on Circuits Devices and Systems, Vol. 148, No. 2, pp. 64-70, April 2001.
  7. "Behaviour of IGBT Modules under short circuit conditions", P.R.Palmer, H.S.Rajamani and J.C. Joyce, 2000 IEEE IAS Annual Meeting Record, paper 69_04, Rome, October 2000.
  8. "Causes of parasitic current oscillation in IGBT modules during turn-off", P.R. Palmer and J.C. Joyce, 8th European Conference on Power Electronics and Applications, paper 376, Lausanne, Sept. 1999.
  9. * "A formalised method for effecting multiple modes in single MOS gated power devices", P.R. Palmer and B.H. Stark, IEE Proceedings on Circuits, Devices and Systems, Vol. 146, No. 4, pp. 203-209, August 1999.
  10. "Some causes of current redistribution in IGBTs during turn off", J.C. Joyce and P.R. Palmer, IEEE/IEEJ International Symposium on Power Semiconductor Devices and ICs, pp. 273-, Toronto, May 1999.
  11. "Automatic timing of mode transitions in multiple mode thyristors", B.H. Stark and P.R. Palmer, - as above -, paper 315, Lausanne, Sept. 1999.
  12. "Switching aspects of hybrid semiconductor power devices", B.H. Stark and P.R. Palmer, IEE Symposium on Pulsed Power, pp. 14/1-14/4, Oxford, April 1999.
  13. "Current redistribution in multichip IGBT modules under various gate drive conditions", P.R. Palmer and J.C. Joyce, IEE Power Electronics and Variable Speed Drives Conference, Publication 456, pp. 246-251, London, Sept. 1998
  14. * "The MOS and Bipolar Gated Thyristor: A thyristor with IGBT turn-off characteristics". P.R. Palmer, D.A. Hinchley and B.H. Stark, IEE Proceedings on Circuits, Devices and Systems, Vol. 145, No. 2, April 1998
  15. "Non-invasive measurement of chip currents in IGBT modules". P.R. Palmer, B.H. Stark and J.C. Joyce, IEEE Power Electronics Specialists Conference, Vol. 1, pp.166-171, St Louis, June 1997
  16. "A comparison of IGBT technologies for use in the series connection". P.R. Palmer, A.N. Githiari and R.J. Leedham, IEE Power Electronics and Variable Speed Drives Conference, Publication 429, pp. 236-241, Nottingham, Sept. 1996
  17. "The MBGT: A thyristor with IGBT turn-off characteristics". P.R. Palmer and D.A. Hinchley, IEE Power Electronics and Variable Speed Drives Conference, Publication 429, pp. 242-246, Nottingham, Sept. 1996
  18. "The evolution of the MOS and Bipolar Gated Thyristor". D.A. Hinchley and P.R. Palmer , IEE Colloquium: Advances in power electronic devices, Digest 1996/146, London, June 1996
  19. "Semiconductor device". P.R. Palmer and D.A. Hinchley, New British Patent Application No. 9525363.9, 12 Dec. 1995 (lapsed)
  20. "Improved design and utilisation of GTO thyristors in traction applications" P.R.Palmer and D.A. Hinchley, EPSRC / DTI LINK PEDDS Workshop, Warwick, May1995
  21. "Identification of the performance critical steps in power semiconductor processing". C.M. Johnson, P.R. Palmer and D.A. Hinchley, 5th European Symposium on Reliability of Electron devices, Glasgow, Oct. 1994.
  22. * "Correlation between local segment characteristics and dynamic current redistribution in GTO power thyristors". C.M. Johnson, A.A. Jaecklin, P.R. Palmer, P. Streit, IEEE Transactions on Electron Devices, Vol. 41, No. 5, pp. 793-799, May 1994
  23. "Thermal imaging of large area pressure mounted devices". P.R. Palmer and D.A. Hinchley Paper 7.14, IEEE/IEJ 5th International Symposium on Power Semiconductor Devices and ICs, Monterey, May 1993
  24. "The design of high performance GTO thyristors". D. A. Hinchley, P.R. Palmer, C.M. Johnson, D.E.Crees, L. Coulbeck, W.J. Findlay, IEE Colloquium: Active and passive components for power electronics, Digest 1992/216, London, Nov. 1992
  25. "Non-destructive Measurements for analysing power semiconductor devices". P.R. Palmer and C.M. Johnson, IEEE/IEJ 4th International Symposium on Power Semiconductor Devices and ICs, Tokyo, May 1992. (Invited Paper)
  26. * "The influence of gate drive and anode circuit conditions on the turn-off performance of GTO thyristors". C.M. Johnson and P.R. Palmer, IEE Proceedings, Pt. B, Vol. 139, No.2, pp. 62-70, March 1992
  27. "Correlation between local segment characteristics and dynamic current redistribution in GTO power thyristors". C.M. Johnson, A.A. Jaecklin, P.R. Palmer, P. Streit, IEEE/IEJ 3rd International Symposium on Power Semiconductor Devices and ICs, pp. 121-127, Baltimore, April 1991
  28. * "Characterising the turn-off performance of multicathode GTO Thyristors using thermal imaging". P.R. Palmer and C.M. Johnson, IEEE Transactions on Power Electronics, Vol. 5, No. 3, pp. 357-362, July 1990
  29. "Measurement of the redistribution of current in GTO Thyristors during turn-off". P.R. Palmer and C.M. Johnson, 3rd European Conference on Power Electronics and Applications, pp. 1621-1625, Aachen, Oct. 1989
  30. "Characterising the turn-off performance of multicathode GTO Thyristors using thermal imaging". P.R. Palmer and C.M. Johnson, IEEE Power Electronics Specialists Conference, pp. 343-350, Milwaukee, June 1989
Computer Simulation Methods:
  1. "Circuit simulator models for the diode and IGBT with full temperature dependent features", P.R. Palmer, P.Y. Eng, J.C. Joyce, J. Hudgins, E. Santi and R. Dougal, IEEE PESC'01, Vol. 4, pp. 2171-2177, Vancouver, June 2001
  2. "Computer simulation of P-type SiC Schottky diode using ATLAS", M. Tarplee, V. Madangarli, Q. Zhang, P.R. Palmer and T.S. Sudarshan, ICSCRM'99, Silicon Carbide and Related Materials 1999, Transtech Publications Ltd, ISBN: 0-87849-854-0, Oct. 1999.
  3. "A PSPICE model of the DG-EST based on the ambipolar diffusion equation", P.R. Palmer and B.H. Stark, IEEE PESC'99, pp.358-363, Charleston, June 1999.
  4. "A modelling approach for dual mode thyristor devices", P.R. Palmer and A.N. Githiari, IEE Power Electronics and Variable Speed Drives Conference, Publication 456, pp. 252-257, London, Sept. 1998
  5. "Performance of power diode model for circuit simulations", K.J. Tseng, J. Yang, C.F. Foo, M. Vilathgamuwa and P.R. Palmer, IEEE PEDS'95, pp. 13-15, Singapore, Feb. 1995.
  6. * "Mathematical model of gate-turn-off thyristor for use in circuit simulations". K.J. Tseng and P.R. Palmer, IEE Proceedings on Electrical Power Applications, Vol. 141, No. 6, pp.284-292, Nov. 1994, (Awarded IEE Swan Premium)
  7. "Implementing power diode models in SPICE and SABER". K.J. Tseng, C.F. Foo and P.R. Palmer, IEEE Power Electronics Specialists Conference, Vol.1, pp. 59-63, 1994
  8. "Accuracy and validation issues for the simulation of power semiconductor devices". C.M. Johnson, D.A. Hinchley and P.R. Palmer, 5th European Conference on Power Electronics and Applications, Vol. 2, pp. 118-124, Brighton, Sept. 1993
  9. "An accurate GTO model for circuit simulations". P.R. Palmer and K.J. Tseng, 5th European Conference on Power Electronics and Applications, Vol. 2, pp. 244-248, Brighton, Sept. 1993
  10. "A SPICE model for the accurate simulation of a power MOSFET during switching". J. Shen and P.R. Palmer, 4th European Conference on Power Electronics and Applications, Vol. O, pp. 284-288, Florence, Sept. 1991
  11. "The modelling of GTO thyristors using SPICE". K.J. Tseng and P.R. Palmer, IEChina/IEEE Conference on Circuits and Systems, Shenzhen, June 1991
  12. * "The simulation of wafer-scale GTO thyristors in circuits". C.M. Johnson and P.R. Palmer, IEEE Transactions on Power Electronics, Vol. 6, No. 2, pp. 308-313, April 1991
  13. "A simple technique for modelling converters with indeterminate voltage states". P.R. Palmer, IEE Power Electronics and Variable Speed Drives Conference, Publication 291, pp. 149-152, Birmingham, July 1988
Motor Drives:
  1. "The measurement of transient electromagnetic torque in high-performance electrical drives". R.C. Healey, S. Lesley, S. Williamson and P.R. Palmer, IEE Power Electronics and Variable Speed Drives Conference, Publication 429, pp. 226-229, Nottingham, Sept. 1996
  2. "Computer aided design of induction motor drives". P.R. Palmer and M.J. Gray, IEE Colloquium: Developments in real-time control for induction motor drives, Digest 1993/024, London, Feb.1993,
  3. "Computer aided design of induction motor drives". P.R. Palmer and M.J. Gray, IEE Colloquium: Variable speed drives and motion control, Digest 1992/194, London, Nov. 1992
  4. "A 3kVA/340Vdc Microprocessor based Hybrid Stepping Motor Drive using MOSFETS". C.K. Patni, B.W. Williams and P.R. Palmer, Drives, Motors, Controls Conference, Birmingham, Nov. 1988
  5. "A novel Unipolar Inverter - Squirrel-Cage Induction Motor Drive". P.R. Palmer and B.W. Williams, IEE Power Electronics and Variable Speed Drives Conference, Publication 264, pp. 93-97, London, Nov. 1986